Features: Glass Passivated Die ConstructionLow Forward Voltage Drop High Current Capability High ReliabilityHigh Surge Current Capability Ideal for Printed Circuit BoardsSpecifications Characteristic Symbol KBP150G KBP151G KBP152G KBP154G KBP156G KBP158G KBP1510G ...
KBP150G: Features: Glass Passivated Die ConstructionLow Forward Voltage Drop High Current Capability High ReliabilityHigh Surge Current Capability Ideal for Printed Circuit BoardsSpecifications Char...
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Characteristic |
Symbol |
KBP 150G |
KBP 151G |
KBP 152G |
KBP 154G |
KBP 156G |
KBP 158G |
KBP 1510G |
Unit |
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
V |
RMS Reverse Voltage |
VR(RMS) |
35 |
70 |
140 |
280 |
420 |
560 |
700 |
V |
Average Rectified Output Current @TA = 50°C |
IO |
10 |
A | ||||||
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM |
50 |
A | ||||||
Forward Voltage (per diode) @IF = 1.5A |
VFM |
1.1 |
V | ||||||
TPeak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C |
IRM |
10 500 |
A | ||||||
Rating for Fusing (t<8.3ms) |
I2t |
10 |
A2s | ||||||
Typical Thermal Resistance |
CJ |
15 |
pF | ||||||
Typical Thermal Resistance (Note 2) |
RJA |
28 |
K/W | ||||||
Operating and Storage Temperature Range |
Tj,TSTG |
-65 to +150 |
°C |