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KB827

Features: 1.High isolation voltage between input and output (Viso=5000 Vrms).2.Compact dual-in-line package KB827:2-channel type3.Recognized by UL and CUL, file NO.E225308.4.Approved by VDE 0884 Teil2(NO:40006364)(Creepage distance between input and output:7mm or more).5.Rohs compliant.Application...

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KB827: Features: 1.High isolation voltage between input and output (Viso=5000 Vrms).2.Compact dual-in-line package KB827:2-channel type3.Recognized by UL and CUL, file NO.E225308.4.Approved by VDE 0884 Tei...

KB827 Data Sheet

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Part Number:
KB827
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

1.High isolation voltage between input and output (Viso=5000 Vrms).
2.Compact dual-in-line package KB827:2-channel type
3.Recognized by UL and CUL, file NO.E225308.
4.Approved by VDE 0884 Teil2(NO:40006364)
(Creepage distance between input and output:7mm or more).
5.Rohs compliant.


Application

1.Computer terminals.
2.Registers,copiers,automatic vending machines.
3.System appliances, measuring instruments.
4.Programmable logic controller.
5.Signal transmission between circuits of different potentials and impedances.


Specifications

Parameter Symbol Rating Unit
Input Forward current

Reverse voltage

Power dissipation		 IF

VR

P		 50

6

75		 mA

V

mW
Output Collector-emitter voltage

Emitter-collector voltage

Collector current

Collector power dissipation		 VCEO

VECO

IC

PC		 35

6

50

150		 V

V

mA

mW
*1Isolation voltage Viso 5000 Vrms
Total power dissipation

Operating temperature

Storage temperature

*2Soldering temperature

Ptot

Topr

Tstg

Tsol

 200

-30~+100

-55~+125

260		 mW







* 1 40 to 60% RH,AC for 1 minute.
* 2 For 10 seconds.


Description

1.The KB827 (2-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor.
2.The lead pitch is 2.54mm.
3.Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm.




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