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KB826

Features: 1.High isolation voltage between input and output (Viso=5000 Vrms).2.High Collector-emitter voltage (Vceo=70V).3.Compact dual-in-line package KB826:2-channel type4.Recognized by UL and CUL, file NO.E225308.5.Rohs compliant.Application1.Computer terminals.2.Registers,copiers,automatic ven...

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KB826: Features: 1.High isolation voltage between input and output (Viso=5000 Vrms).2.High Collector-emitter voltage (Vceo=70V).3.Compact dual-in-line package KB826:2-channel type4.Recognized by UL and CUL...

KB826 Data Sheet

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Part Number:
KB826
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

1.High isolation voltage between input and output (Viso=5000 Vrms).
2.High Collector-emitter voltage (Vceo=70V).
3.Compact dual-in-line package KB826:2-channel type
4.Recognized by UL and CUL, file NO.E225308.
5.Rohs compliant.


Application

1.Computer terminals.
2.Registers,copiers,automatic vending machines.
3.System appliances, measuring instruments.
4.Programmable logic controller.
5.Signal transmission between circuits of different potentials and impedances.


Specifications

Parameter
Symbol
Rating
Unit
Input Forward current
IF
50
mA
Reverse Voltage
VR
6
V
Power dissipation
P
70
mW
Output Collector-emitter voltage
VCEO
70
V
Emitter-collector voltage
VECO
6
V
Collector current
IC
50
V
Collector power dissipation
PC
150
mW
Total power dissipation
Ptot
200
mW
*1Isolation voltage
Viso
5000
Vrms
Operating temperature
Topr
-30~+100
Storage temperature
Tstg
-55~+125
?3Soldering temperature
Tsol
260



Description

1.The KB826 (2-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor.
2.The lead pitch is 2.54mm.
3.Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm.




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