KB817

Features: 1.High isolation voltage between input and output (Viso=5000 Vrms).2.Compact dual-in-line package KB817:1-channel type3.Recognized by UL and CUL, file NO.E225308.4.Approved by VDE 0884 Teil2(NO:40006364) (Creepage distance between input and output:7mm or more).5.Rohs compliant.Applicatio...

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SeekIC No. : 004384143 Detail

KB817: Features: 1.High isolation voltage between input and output (Viso=5000 Vrms).2.Compact dual-in-line package KB817:1-channel type3.Recognized by UL and CUL, file NO.E225308.4.Approved by VDE 0884 Tei...

floor Price/Ceiling Price

Part Number:
KB817
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

1.High isolation voltage between input and output (Viso=5000 Vrms).
2.Compact dual-in-line package KB817:1-channel type
3.Recognized by UL and CUL, file NO.E225308.
4.Approved by VDE 0884 Teil2(NO:40006364) (Creepage distance between input and output:7mm or more).
5.Rohs compliant.



Application

1.Computer terminals.
2.Registers,copiers,automatic vending machines.
3.System appliances, measuring instruments.
4.Programmable logic controller.
5.Signal transmission between circuits of different potentials and impedances.



Specifications

Parameter
Symbol
Rating
Unit
Input
Forward current
IF
50
mA
Reverse Voltage
VR
6
V
Power dissipation
P
70
mW
Output
Collector-emitter voltage
VCEO
35
V
Emitter-collector voltage
VECO
6
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Total power dissipation
Ptot
200
mW
*1 Isolation voltage
Viso
5000
Vrms
Operating temperature
Topr
-30 to +100
°C
Storage temperature
Tstg
-55 to +125
°C
*2 Soldering temperature
Tsol
260
°C

* 1 40 to 60% RH,AC for 1 minute.
* 2 For 10 seconds.



Description

1.The KB817 (1-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor.
2.The lead pitch is 2.54mm.
3.Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm.


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