KAF-6303E

The KAF-6303E is a high performance monochrome area CCD (charge-coupled device) image sensor with 3072H x 2048V photo active pixels designed for a wide range of image sensing applications in the 0.3 nm to 1.0 nm wavelength band. Typical applications include military, scientific, and industrial imaging. A 74dB dynamic range is possible operating at room temperature.

The sensor is built with a true two-phase CCD technology. This technology simplifies the support circuits that drive the sensor and reduces the dark current without compromising charge capacity. The transparent gate results in spectral response increased ten times at 400nm, compared to a front side illuminated standard polysilicon gate technology. The sensitivity is increased 50% over the rest of the visible wavelengths.

Total chip size is 29.0 mm x 19.1 mm and is housed in a 26-pin, 0.88" wide DIL ceramic package with 0.1" pin spacing.

The sensor consists of 3088 parallel (vertical) CCD shift registers each 2056 elements long. These registers act as both the photosensitive elements and as the transport circuits that allow the image to be sequentially read out of the sensor. The elements of these registers are arranged into a 3072 x 2048 photosensitive array surrounded by a light shielded dark reference of 16 columns and 8 rows. The parallel (vertical) CCD registers transfer the image one line at a time into a single 3100 element (horizontal) CCD shift register.

The horizontal register transfers the charge to a single output amplifier. The output amplifier is a two-stage source follower that converts the photo-generated charge to a voltage for each pixel