KAF-1602E

The KAF-1602 is a high performance monochrome area CD (charge-coupled device) image sensor with 1536H  1024V photoactive pixels designed for a wide range  f image sensing applications in the 0.4nm to 1.0nm avelength band. Typical applications include military, cientific, and industrial imaging. A 74dB dynamic ange is possible operating at room temperature. he sensor is built with a true two-phase CCD echnology employing a transparent gate. This echnology simplifies the support circuits that drive the ensor and reduces the dark current without ompromising charge capacity.

The transparent gate results in spectral response ncreased ten times at 400nm, compared to a front side lluminated standard poly silicon gate technology. The ensitivity is increased 50% over the rest of the visible avelengths.

Total chip size is 13.8mm x 9.2mm and is housed in a 4-pin, 0.88" wide DIL ceramic package with 0.1" pin pacing.

The sensor consists of 1552 parallel (vertical) CCD hift registers each 1032 elements long. These registers ct as both the photosensitive elements and as the ransport circuits that allow the image to be sequentially ead out of the sensor. The elements of these registers re arranged into a 1536 x 1024 photosensitive array urrounded by a light shielded dark reference of 16 olumns and 8 rows. The parallel (vertical) CCD egisters transfer the image one line at a time into a ingle 1564 element (horizontal) CCD shift register.

The horizontal register transfers the charge to a single utput amplifier. The output amplifier is a two-stage ource follower that converts the photogenerated charge o a voltage for each pixel.