Features: ` Single 2.7V~3.6V Supply` Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit` Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte` 528 -Byte Page Read Operation - Random Access : 7s(Max.) - Serial Page Ac...
K9S6408V0A-SSB0: Features: ` Single 2.7V~3.6V Supply` Organization - Memory Cell Array : (8M + 256K)bit x 8bit - Data Register : (512 + 16)bit x8bit` Automatic Program and Erase - Page Program : (512 + 16)Byte - Blo...
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Features: •Single 2.7V~3.6V Supply•Organization - Memory Cell Array : 8MB(K9S6408V0X) ...
Features: •Single 2.7V~3.6V Supply•Organization - Memory Cell Array : 8MB(K9S6408V0X) ...
Parameter | Symbol |
Rating |
Unit | |
Voltage on any pin relative to VSS | VIN |
-0.6 to + 4.6 |
V | |
VCC | -0.6 to + 4.6 | |||
Temperature Under Bias | TBIAS |
-10 to +65 |
||
Storage Temperature | TSTG |
-20 to +65 |
The K9S6408V0A is a 8M(8,388,608)x8bit NAND Flash Memory ith a spare 256K(262,144)x8bit. Its NAND cell provides the ost cost-effective solution for the solid state mass storage arket. A program operation programs the 528-byte page in ypically 200s and an erase operation can be performed in typically ms on an 8K-byte block. Data in the page can be read ut at 50ns cycle time per byte. The I/O pins serve as the ports or address and data input/output as well as command inputs. he on-chip write controller automates all program and erase unctions including pulse repetition, where required, and internal erify and margining of data. Even the write-intensive systems an take advantage of the K9S6408V0A¢s extended eliability of 1,000,000 program/erase cycles by providing CC(Error Correcting Code) with real time mapping-out algorithm.
he K9S6408V0A is an optimum solution for large nonvolatile torage applications such as solid state file storage, digital oice recorder, digital still camera and other portable applications equiring non-volatility.