Features: •Single 2.7V~3.6V Supply•Organization - Memory Cell Array : (64M + 2,048K)bit x 8bit - Data Register : (512 + 16)bit x8bit•Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte•528-Byte Page Read Operation - Random Access : 12...
K9S1208V0M-SSB0: Features: •Single 2.7V~3.6V Supply•Organization - Memory Cell Array : (64M + 2,048K)bit x 8bit - Data Register : (512 + 16)bit x8bit•Automatic Program and Erase - Page Program : (5...
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Features: •Single 2.7V~3.6V Supply•Organization- Memory Cell Array :- K9S1208V0X: (64M...
Parameter | Symbol |
Rating |
Unit | |
Voltage on any pin relative to VSS | VIN |
-0.6 to + 4.6 |
V | |
VCC | -0.6 to + 4.6 | |||
Temperature Under Bias | TBIAS |
-10 to +65 |
||
Storage Temperature | TSTG |
-20 to +65 |
The K9S1208V0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528- byte page in typically 200ms and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. n, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9S1208V0M¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9S1208V0M is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility.