K9LAG08U1M

Features: • Voltage Supply : 2.7 V ~ 3.6 V• Organization - Memory Cell Array : (1G + 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit• Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte• Page Read Operation - Page Size : (2K + 64)B...

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SeekIC No. : 004383546 Detail

K9LAG08U1M: Features: • Voltage Supply : 2.7 V ~ 3.6 V• Organization - Memory Cell Array : (1G + 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit• Automatic Program and Erase - Page Program...

floor Price/Ceiling Price

Part Number:
K9LAG08U1M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Voltage Supply : 2.7 V ~ 3.6 V
• Organization
  - Memory Cell Array : (1G + 32M)bit x 8bit
  - Data Register : (2K + 64)bit x8bit
• Automatic Program and Erase
  - Page Program : (2K + 64)Byte
  - Block Erase : (256K + 8K)Byte
• Page Read Operation
  - Page Size : (2K + 64)Byte
  - Random Read : 60µs(Max.)
  - Serial Access : 30ns(Min.)
• Memory Cell : 2bit / Memory Cell
• Fast Write Cycle Time
  - Program time : 800µs(Typ.)
  - Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
  - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
  - Endurance : 5K Program/Erase Cycles(with 4bit/512byte
  - Data Retention : 10 Years
• Command Register Operation
• Unique ID for Copyright Protection
• Package :
  - K9G8G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
  - K9G8G08U0M-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
  - K9LAG08U1M-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)



Pinout

  Connection Diagram


Specifications

Parameter Symbol Rating Unit
Voltage on any pin relative to VSS VCC -0.6 to + 4.6 V
VIN -0.6 to + 4.6
VI/O -0.6 to Vcc+0.3 (<4.6V)
Temperature Under Bias K9XXG08UXM-XCB0 TBIAS -10 to +125 °C
K9XXG08UXM-XIB0 -40 to +125
Storage Temperature K9XXG08UXM-XCB0 TSTG -65 to +150 °C
K9XXG08UXM-XIB0
Short Circuit Current Los 5 mA


NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

Offered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9G8G08U0Ms extended reliability of 5K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9G8G08U0M is an optimum solutionfor large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.




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