K9K8G08U0A-Y

Features: • Voltage Supply- 2.70V ~ 3.60V• Organization- Memory Cell Array : (1G + 32M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and Erase- Page Program : (2K + 64)Byte- Block Erase : (128K + 4K)Byte• Page Read Operation- Page Size : (2K + 64)Byte- Random...

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K9K8G08U0A-Y Picture
SeekIC No. : 004383541 Detail

K9K8G08U0A-Y: Features: • Voltage Supply- 2.70V ~ 3.60V• Organization- Memory Cell Array : (1G + 32M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and Erase- Page Program : (2K + ...

floor Price/Ceiling Price

Part Number:
K9K8G08U0A-Y
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Voltage Supply
- 2.70V ~ 3.60V
• Organization
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25s(Max.)
- Serial Access : 25ns(Min.)
* K9NBG08U5A : 50ns(Min.)
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
• Fast Write Cycle Time
- Page Program time : 200s(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9K8G08U0A-PCB0/PIB0
  48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1A-PCB0/PIB0
  48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1A-ICB0/IIB0
  52 - Pin TLGA (12 x 17 / 1.0 mm pitch)
- K9NBG08U5A-PCB0/PIB0
  48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)



Pinout

  Connection Diagram


Specifications

Parameter Symbol Rating Unit
1.8V 3.3V
Voltage on any pin relative to VSS VCC -0.6 to +2.45 -0.6 to +4.6 V
VIN -0.6 to +2.45 -0.6 to +4.6
VI/O -0.6 to Vcc + 0.3 (< 2.45V) -0.6 to Vcc + 0.3 (< 4.6V)
Temperature Under
Bias
K9F2G08X0A-XCB0 TBIAS -10 to +125 °C
K9F2G08X0A-XIB0 -40 to +125
Storage Temperature K9F2G08X0A-XCB0 TSTG -65 to +150 °C
K9F2G08X0A-XIB0
Short Circuit Current IOS 5 mA



Description

Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(K9NBG08U5A : 50ns) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package and another ultra high density solution having two 16Gb TSOPI package stacked with four chip selects is also available in TSOPI-DSP.




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