Features: • Voltage Supply- 2.70V ~ 3.60V• Organization- Memory Cell Array : (1G + 32M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and Erase- Page Program : (2K + 64)Byte- Block Erase : (128K + 4K)Byte• Page Read Operation- Page Size : (2K + 64)Byte- Random...
K9K8G08U0A-Y: Features: • Voltage Supply- 2.70V ~ 3.60V• Organization- Memory Cell Array : (1G + 32M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and Erase- Page Program : (2K + ...
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PinoutDescriptionThe K9K8G08U0A-PCBO is a kind of perliminary 8G-bit NAND flash memory with spare ...
Features: • Voltage Supply - 2.70V ~ 3.60V• Organization - Memory Cell Array : (1G + 3...
Features: • Voltage Supply - 2.70V ~ 3.60V• Organization - Memory Cell Array : (512M +...
Parameter | Symbol | Rating | Unit | ||
1.8V | 3.3V | ||||
Voltage on any pin relative to VSS | VCC | -0.6 to +2.45 | -0.6 to +4.6 | V | |
VIN | -0.6 to +2.45 | -0.6 to +4.6 | |||
VI/O | -0.6 to Vcc + 0.3 (< 2.45V) | -0.6 to Vcc + 0.3 (< 4.6V) | |||
Temperature Under Bias |
K9F2G08X0A-XCB0 | TBIAS | -10 to +125 | °C | |
K9F2G08X0A-XIB0 | -40 to +125 | ||||
Storage Temperature | K9F2G08X0A-XCB0 | TSTG | -65 to +150 | °C | |
K9F2G08X0A-XIB0 | |||||
Short Circuit Current | IOS | 5 | mA |
Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(K9NBG08U5A : 50ns) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package and another ultra high density solution having two 16Gb TSOPI package stacked with four chip selects is also available in TSOPI-DSP.