K9K2G08U0M

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112- byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 80ns(1.8V device) or 50ns(3.3V device) cycle time per byte(X8 device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K2GXXX0M¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K2GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 2Gb stacked with two chip selects is also available in standard TSOPI package.