Features: • Voltage Supply - 2.7 V ~3.6 V• Organization - Memory Cell Array - (256M + 8,192K)bit x 8bit - Data Register - (2K + 64)bit x8bit - Cache Register - (2K + 64)bit x8bit• Automatic Program and Erase - Page Program - (2K + 64)Byte - Block Erase - (128K + 4K)Byte• Pa...
K9K2G08U0A: Features: • Voltage Supply - 2.7 V ~3.6 V• Organization - Memory Cell Array - (256M + 8,192K)bit x 8bit - Data Register - (2K + 64)bit x8bit - Cache Register - (2K + 64)bit x8bit• ...
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Features: • Voltage Supply -1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2....
Features: · Voltage Supply-1.8V device(K9F1GXXQ0M): 1.70V~1.95V-3.3V device(K9F1GXXU0M): 2.7 V ~3....
Features: · Voltage Supply-1.8V device(K9F1GXXQ0M): 1.70V~1.95V-3.3V device(K9F1GXXU0M): 2.7 V ~3....
Parameter | Symbol |
Rating |
Unit | ||
-0.6 to + 4.6 | |||||
Voltage on any pin relative to VSS | VIN/OUT |
V | |||
VCC |
-0.6 to + 4.6 | ||||
Temperature Under Bias | K9K2G08U0A-VCB0 | TBIAS |
-10 to +125 |
||
K9K2G08U0A-VIB0 |
-40 to +125 | ||||
Storage Temperature | K9K2G08U0A-VCB0 | TSTG |
-65 to +150 |
||
K9K2G08U0A-VIB0 | |||||
Short Circuit Current | IOS |
5 |
mA |
Offered in 256Mx8bit the K9K2G08U0A is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200s on the 2112byte page and an erase operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K2G08U0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K2G08U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.