Features: · Voltage Supply - 1.8V device(K9K1GXXQ0A) : 1.70~1.95V - 3.3V device(K9K1GXXU0A) : 2.7 ~ 3.6 V· Organization - Memory Cell Array - X8 device(K9K1G08X0A) : (128M + 4096K)bit x 8 bit - X16 device(K9K1G16X0A) : (64M + 2048K)bit x 16bit - Data Register - X8 device(K9K1G08X0A) : (512 + 16)bi...
K9K1G08Q0A: Features: · Voltage Supply - 1.8V device(K9K1GXXQ0A) : 1.70~1.95V - 3.3V device(K9K1GXXU0A) : 2.7 ~ 3.6 V· Organization - Memory Cell Array - X8 device(K9K1G08X0A) : (128M + 4096K)bit x 8 bit - X16 ...
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Features: • Voltage Supply - 1.8V device(K9K12XXQ0C) : 1.70~1.95V - 2.65V device(K9F12XXD0C)...
Features: • Voltage Supply - 1.8V device(K9K12XXQ0C) : 1.70~1.95V - 2.65V device(K9F12XXD0C)...
Features: · Voltage Supply- 1.8V device(K9F56XXQ0C) : 1.70~1.95V- 3.3V device(K9F56XXU0C) : 2.7 ~ ...
Parameter | Symbol |
Rating |
Unit | ||
K9K1GXXQ0A(1.8V) |
K9K1GXXU0A(3.3V) | ||||
Voltage on any pin relative to VSS | VIN/OUT |
-0.6 to + 2.45 |
-0.6 to + 4.6 |
V | |
VCC |
-0.2 to + 2.45 |
-0.6 to + 4.6 | |||
VCCQ |
-0.2 to + 2.45 |
-0.6 to + 4.6 | |||
Temperature Under Bias | K9K1GXXX0A-XCB0 | TBIAS |
-10 to +125 |
||
K9K1GXXX0A-XIB0 |
-40 to +125 | ||||
Storage Temperature | K9K1GXXX0A-XCB0 | TSTG |
-65 to +150 |
||
K9K1GXXX0A-XIB0 | |||||
Short Circuit Current | IOS |
5 |
mA |
The K9K1G08U0A is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typically 200ms on the 528-byte(x8 device) or 264-word(x16 device) page and an erase operation can be performed in typically 2ms on a 16K-byte(x8 device) or 8K-word(x16 device) block. Data in the data register can be read out at 50ns(1.8V device : 60ns) cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command inputs. The onchip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9K1G08U0A¢s extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K1G08U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.