Features: · Voltage supply : 2.7V ~ 5.5V· Organization - Memory Cell Array : (1M + 32K)bit x 8bit - Data Register : (256 + 8)bit x8bit· Automatic Program and Erase(Typical) - Page Program : (256 + 8)Byte in 250ms - Block Erase : (4K + 128)Byte in 2ms - Status Register· 264-Byte Page Read Operation...
K9F8008W0M-TIB0: Features: · Voltage supply : 2.7V ~ 5.5V· Organization - Memory Cell Array : (1M + 32K)bit x 8bit - Data Register : (256 + 8)bit x8bit· Automatic Program and Erase(Typical) - Page Program : (256 + 8...
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Features: · Voltage supply : 2.7V ~ 5.5V· Organization - Memory Cell Array : (1M + 32K)bit x 8bit ...
Parameter | Symbol | Rating | Unit | |
Voltage on any pin relative to VSS | VIN | -0.6 to +7.0 | V | |
Temperature Under Bias | K9F1608W0A-TCB0 | TBIAS | -10 to +125 | °C |
K9F1608W0A-TIB0 | -40 to +125 | |||
Storage Temperature | TSTG | -65 to +150 | °C | |
Short Circuit Output Current | IOS | 5 | mA |
The K9F8008W0M is a 1M(1,048,576)x8bit NAND Flash Memory with a spare 32K(32,768)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250ms and an erase operation can be performed in typically 2ms on a 4K-byte block.
Data in the page can be read out at 80ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase system functions, including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9F8008W0M extended reliability of 1,000,000 program/erase cycles by providing either ECC(Error Correction Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications and also the spare 8bytes of a page combined with the other 256 bytes can be utilized by system-level ECC.
The K9F8008W0M is an optimum solution for large nonvolatile storage application such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.