K9F6408U0B

The K9F6408U0B is one member of the K9F6408U0C family that is designed as the 8M x 8 Bit NAND flash memory. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 200ms and an erase operation can be performed in typical 2ms on an 8K-byte block. Also this device is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility.

Features of the K9F6408U0B are:(1)Automatic Program and Erase;(2)528-Byte Page Read Operation;(3)Command/Address/Data Multiplexed I/O Port;(4)Hardware Data Protection Program/Erase Lockout During Power Transitions;(5)Reliable CMOS Floating-Gate Technology Endurance: 100K Program/Erase Cycles;(6)Command Register Operation.

The absolute maximum ratings of the K9F6408U0B can be summarized as:(1)Voltage on any pin relative to VSS (VIN/OUT): -0.6 to + 4.6 V;(2)Voltage on any pin relative to VSS (Vcc): -0.6 to + 4.6 V;(3)Voltage on any pin relative to VSS (Vccq): -0.6 to + 4.6 V;(4)Storage Temperature: -65 to + 150 °C;(5)Temperature Under Bias: -10 to + 125 °C. If you want to know more information such as the electrical characteristics about the K9F6408U0B, please download the datasheet in www.seekic.com or www.chinaicmart.com.