K9F6408U0B-TIB0

Features:

` Voltage Supply : 2.7V ~ 3.6V
` Organization
     - Memory Cell Array : (8M + 256K)bit x 8bit
     - Data Register : (512 + 16)bit x8bit
` Automatic Program and Erase
     - Page Program : (512 + 16)Byte
     - Block Erase : (8K + 256)Byte
` 528-Byte Page Read Operation
    - Random Access : 10ms(Max.)
    - Serial Page Access : 50ns(Min.)
` Fast Write Cycle Time
    - Program Time : 200s(Typ.)
    - Block Erase Time : 2ms(Typ.)
` Command/Address/Data Multiplexed I/O port
` Hardware Data Protection
    - Program/Erase Lockout During Power Transitions
` Reliable CMOS Floating-Gate Technology
    - Endurance : 100K Program/Erase Cycles
    - Data Retention : 10 years
` Command Register Operation
` 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)


Pinout




Specifications

Parameter		Symbol	Rating	Unit
Voltage on any pin relative to VSS		VIN	-0.6 to + 4.6	V
		VCC	-0.6 to + 4.6	V
Temperature Under Bias	K9F6408U0B-TCB0	TBIAS	-10 to + 125	°C
	K9F6408U0B-TIB0		-40 to + 125
Storage Temperature		TSTG	-65 to + 150	°C

NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V_CC+0.3V which, during transitions, may overshoot to V_CC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The K9F6408U0B is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 200ms and an erase operation can be performed in tpical 2ms on an 8K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F6408U0B¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications and also the spare 16 bytes of a page combined with the other 512 bytes can be utilized by system-level ECC. The K9F6408U0B is an optimum solution for large nonvolatile storage applications such as solid state file storage, digita  voice recorder, digital still camera and other portable applications requiring non-volatility.