K8D6x16UTM Selling Leads, Price trend, K8D6x16UTM DataSheet download, circuit diagram from SeekIC.com

Features: • Single Voltage, 2.7V to 3.6V for Read and Write operations• Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode)• Fast Read Access Time : 70ns• Read While Program/Erase Operation• Dual Bank architectures Bank 1 / Bank 2 : 16Mb / 48Mb...

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SeekIC No. : 004383352 Detail

K8D6x16UTM: Features: • Single Voltage, 2.7V to 3.6V for Read and Write operations• Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode)• Fast Read Access Time : 70ns...

K8D6x16UTM Data Sheet

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Part Number:: K8D6x16UTM
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

Description

Features:

• Single Voltage, 2.7V to 3.6V for Read and Write operations
• Organization
8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode)
• Fast Read Access Time : 70ns
• Read While Program/Erase Operation
• Dual Bank architectures
Bank 1 / Bank 2 : 16Mb / 48Mb
• Secode(Security Code) Block : Extra 64K Byte block
• Power Consumption (typical value @5MHz)
- Read Current : 14mA
- Program/Erase Current : 15mA
- Read While Program or Read While Erase Current : 25mA
- Standby Mode/Auto Sleep Mode : 10A
• WP/ACC input pin
- Allows special protection of two outermost boot blocks at VIL,
regardless of block protect status
- Removes special protection of two outermost boot block at VIH,
the two blocks return to normal block protect status
- Program time at VHH : 9s/word
• Erase Suspend/Resume
• Unlock Bypass Program
• Hardware RESET Pin
• Command Register Operation
• Block Group Protection / Unprotection
• Supports Common Flash Memory Interface
• Industrial Temperature : -40°C to 85°C
• Endurance : 100,000 Program/Erase Cycles Minimum
• Data Retention : 10 years
• Package : 48 Pin TSOP1 : 12 x 20 mm / 0.5 mm Pin pitch
48 Ball TBGA : 6 x 9 mm / 0.8 mm Ball pitch
48 Ball FBGA : 6 x 9 mm / 0.8 mm Ball pitch

Pinout

Connection Diagram

Specifications

Parameter		Symbol	Rating	Unit
Voltage on any pin relative to VSS	V_CC	V_CC	-0.5 to +4.0	V
	A9, OE , RESET	V_IN	-0.5 to +12.5
	WP/ACC		-0.5 to +12.5
	All Other Pins		-0.5 to +4.0
Temperature Under Bias	Commercial	T_BIAS	-10 to +125	°C
Temperature Under Bias	Industrial	T_BIAS	-40 to +125	°C
Storage Temperature		T_STG	-65 to +150	°C
Operating Temperature		TA (Commercial Temp.)	0 to +70	°C
Operating Temperature		TA (Industrial Temp.)	-40 to + 85	°C
Short Circuit Current		I_OS	5	mA

Notes :
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC voltage on
input / output pins is Vcc+0.5V which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Minimum DC voltage is -0.5V on A9, OE, RESET and WP/ACC pins. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC
voltage on A9, OE, RESET pins is 12.5V which, during transitions, may overshoot to 14.0V for periods <20ns.
3. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliabili

Description

The K8D6316U featuring single 3.0V power supply, is a 64Mbit NOR-type Flash Memory organized as 8Mx8 or 4M x16. The memory architecture of the device is designed to divide its memory arrays into 135 blocks to be protected by the block group. This block architecture provides highly flexible erase and program capability. The K8D6316U NOR Flash consists of two banks. This device is capable of reading data from one bank while programming or erasing in the other bank. Access times of 70ns, 80ns and 90ns are available for the device. The devices fast access times allow high speed microprocessors to operate without wait states. The device performs a program operation in units of 8 bits (Byte) or 16 bits (Word) and erases in units of a block. Single or multiple blocks can be erased. The block erase operation is completed within typically 0.7 sec. The device requires 15mA as program/erase current in the standard and industrial temperature ranges.

The K8D6316U NOR Flash Memory is created by using Samsung's advanced CMOS process technology. This device is available in 48 pin TSOP1 and 48 ball TBGA,FBGA packages. The device is compatible with EPROM applications to require high-density and cost-effective nonvolatile read/write storage solutions.

K8D6x16UTM

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