K7N801801B

• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data contention .
• interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• 100-TQFP-1420A
• Operating in commercial and industrial temperature range.

*Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VDDQ must not exceed VDD during normal operation.

The K7N803601B and K7N801801B are 9,437,184 bits Synchronous Static SRAMs.

The NtRAMTM, or No Turnaround Random Access Memory K7N801801B utilizes all the bandwidth in any combination of operating cycles.Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied "High or Low".Asynchronous inputs include the sleep mode enable(ZZ).Output Enable controls the outputs at any given time.

Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates omplex offchip write pulse generation and provides increased timing flexibility for incoming signals.For read cycles, pipelined SRAM output data is temporarily stored by an edge triggered output register and then released to the output buffers at the next rising edge of clock.
 
The K7N803601B and K7N801801B are implemented with SAMSUNGs high performance CMOS technology and is available in 100pin TQFP and Multiple power and ground pins minimize ground bounce