K7D803671B

NOTE : Power Dissipation Capability will be dependent upon package characteristics and use environment. See enclosed thermal impedance data.Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The K7D803671B and K7D801871B are 9,437,184 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 262,144 words by 36 bits for K7D803671B and 524,288 words by 18 bits for K7D801871B, fabricated using Samsung's advanced CMOS technology.

Single differential HSTL level clock, K and K are used to initiate the read/write operation and all internal operations are self-timed. At the rising edge of K clock, all addresses and burst control inputs are registered internally. Data inputs are registered one cycle after write addresses are asserted(Late Write), at the rising edge of K clock for single data rate (SDR) write operations and at rising and falling edge of K clock for a double data rate (DDR) write operations.

Data outputs are updated from output registers off the rising edges of K clock for SDR read operations, and off the rising and falling edges of K clock for DDR read operations. Free running echo clocks are supported which are representive of data output access time for all SDR and DDR operations.

The chip K7D803671B is operated with a single +2.5V power supply and is compatible with Extended HSTL input and output. The package is 9x17(153) Ball Grid Array balls on a 1.27mm pitch.