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K6X1008T2D-Q

Features: ` Process Technology: Full CMOS` Organization: 128K x 8` Power Supply Voltage: 2.7~3.6V` Low Data Retention Voltage: 1.5V(Min)` Three state outputs` Package Type: 32-SOP-525, 32-TSOP1-0820F,32-SOP-525, 32-TSOP1-0820FPinoutSpecifications Item Symbol Ratings Unit Remark Vol...

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SeekIC No. : 004383227 Detail

K6X1008T2D-Q: Features: ` Process Technology: Full CMOS` Organization: 128K x 8` Power Supply Voltage: 2.7~3.6V` Low Data Retention Voltage: 1.5V(Min)` Three state outputs` Package Type: 32-SOP-525, 32-TSOP1-0820...

K6X1008T2D-Q Data Sheet

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Part Number:
K6X1008T2D-Q
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

` Process Technology: Full CMOS
` Organization: 128K x 8
` Power Supply Voltage: 2.7~3.6V
` Low Data Retention Voltage: 1.5V(Min)
` Three state outputs
` Package Type: 32-SOP-525, 32-TSOP1-0820F,32-SOP-525, 32-TSOP1-0820F




Pinout

Connection Diagram


Specifications

Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.2 to VCC+0.3V(Max. 3.9V) V -
Voltage on Vcc supply relative to Vss VCC -0.2 to 3.9 V -
Power Dissipation PD 1.0 W -
Storage temperature TSTG -65 to 150 °C -
Operating Temperature TA 0 to 70 °C K6X1008T2D-B

-40 to 85

°C

K6X1008T2D-F

-40 to 125

°C

K6X1008T2D-Q

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The K6X1008T2D-Q families are fabricated by SAMSUNG¢s advanced CMOS process technology. The K6X1008T2D-Q families support verious operating temperature ranges and have various package types for user flexibility of system design. The K6X1008T2D-Q families also support low data retention voltage for battery back-up operation with low data retention current.




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