Features: ` Process Technology: Full CMOS` Organization: 128K x 8` Power Supply Voltage: 2.7~3.6V` Low Data Retention Voltage: 1.5V(Min)` Three state outputs` Package Type: 32-SOP-525, 32-TSOP1-0820F,32-SOP-525, 32-TSOP1-0820FPinoutSpecifications Item Symbol Ratings Unit Remark Vol...
K6X1008T2D-B: Features: ` Process Technology: Full CMOS` Organization: 128K x 8` Power Supply Voltage: 2.7~3.6V` Low Data Retention Voltage: 1.5V(Min)` Three state outputs` Package Type: 32-SOP-525, 32-TSOP1-0820...
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Features: · Process Technology: Full CMOS· Organization: 128K x 8· Power Supply Voltage: 4.5~5.5V·...
DescriptionThe K6X1008C2D-BF55 belongs to the K6X1008C2D family that designed as the 128M x 8 bit ...
Features: · Process Technology: Full CMOS· Organization: 128K x 8· Power Supply Voltage: 4.5~5.5V·...
` Process Technology: Full CMOS
` Organization: 128K x 8
` Power Supply Voltage: 2.7~3.6V
` Low Data Retention Voltage: 1.5V(Min)
` Three state outputs
` Package Type: 32-SOP-525, 32-TSOP1-0820F,32-SOP-525, 32-TSOP1-0820F
Item | Symbol | Ratings | Unit | Remark |
Voltage on any pin relative to Vss | VIN,VOUT | -0.2 to VCC+0.3V(Max. 3.9V) | V | - |
Voltage on Vcc supply relative to Vss | VCC | -0.2 to 3.9 | V | - |
Power Dissipation | PD | 1.0 | W | - |
Storage temperature | TSTG | -65 to 150 | °C | - |
Operating Temperature | TA | 0 to 70 | °C | K6X1008T2D-B |
-40 to 85 |
°C |
K6X1008T2D-F | ||
-40 to 125 |
°C |
K6X1008T2D-Q |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The K6X1008T2D-B families are fabricated by SAMSUNG¢s advanced CMOS process technology. The K6X1008T2D-B families support verious operating temperature ranges and have various package types for user flexibility of system design. The K6X1008T2D-B families also support low data retention voltage for battery back-up operation with low data retention current.