Features: · Process Technology: Full CMOS· Organization: 32K x 8· Power Supply Voltage: 4.5~5.5V· Low Data Retention Voltage: 2V(Min)· Three state output and TTL Compatible· Package Type: 28-DIP-600B, 28-SOP-450,28-TSOP1-0813.4F/RPinoutSpecifications Item Symbol Ratings Unit Remark ...
K6X0808C1D-F: Features: · Process Technology: Full CMOS· Organization: 32K x 8· Power Supply Voltage: 4.5~5.5V· Low Data Retention Voltage: 2V(Min)· Three state output and TTL Compatible· Package Type: 28-DIP-600...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: · Process Technology: Full CMOS· Organization: 32K x 8· Power Supply Voltage: 4.5~5.5V· ...
Features: · Process Technology: Full CMOS28-· Organization: 32K x 8· Power Supply Voltage: 2.7~3.6...
Features: · Process Technology: Full CMOS28-· Organization: 32K x 8· Power Supply Voltage: 2.7~3.6...
· Process Technology: Full CMOS
· Organization: 32K x 8
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2V(Min)
· Three state output and TTL Compatible
· Package Type: 28-DIP-600B, 28-SOP-450,28-TSOP1-0813.4F/R
Item | Symbol | Ratings | Unit | Remark |
Voltage on any pin relative to Vss | VIN,VOUT | -0.5 to VCC+0.5V(Max. 7.0V) | V | - |
Voltage on Vcc supply relative to Vss | VCC | -0.3 to 7.0 | V | - |
Power Dissipation | PD | 1.0 | W | - |
Storage temperature | TSTG | -65 to 150 | °C | - |
Operating Temperature | TA | -40 to 85 | °C | K6X0808C1D-F |
-40 to 125 |
°C |
K6X0808C1D-Q |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The K6X0808C1D families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support verious operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.