Features: · Process Technology: TFT· Organization: 512K x16· Power Supply Voltage: 4.5~5.5V· Low Data Retention Voltage: 2.0V(Min)· Three state output and TTL Compatible· Package Type: 44-TSOP2-400F/RPinoutSpecifications Item Symbol Ratings Unit Remark Voltage on any pin relative t...
K6T8016C3M-F: Features: · Process Technology: TFT· Organization: 512K x16· Power Supply Voltage: 4.5~5.5V· Low Data Retention Voltage: 2.0V(Min)· Three state output and TTL Compatible· Package Type: 44-TSOP2-400F...
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Features: · Process Technology: TFT· Organization: 512K x16· Power Supply Voltage: 4.5~5.5V· Low D...
Item | Symbol | Ratings | Unit | Remark |
Voltage on any pin relative to Vss | VIN,VOUT | -0.5 to VCC+0.5 | V | - |
Voltage on Vcc supply relative to Vss | VCC | -0.3 to 7.0 | V | - |
Power Dissipation | PD | 1.0 | W | - |
Storage temperature | TSTG | -65 to 150 | °C | - |
Operating Temperature | TA | 0 to 70 | °C | K6T8016C3M-B |
-40 to 85 |
°C |
K6T8016C3M-F |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The K6T8016C3M families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support industrial operating temperature ranges for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.