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K6T1008C2E

Features: · Process Technology: TFT· Organization: 128Kx8· Power Supply Voltage: 4.5~5.5V· Low Data Retention Voltage: 2V(Min)· Three state output and TTL Compatible· Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F/RSpecifications Item Symbol Ratings Unit Remark ...

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SeekIC No. : 004383204 Detail

K6T1008C2E: Features: · Process Technology: TFT· Organization: 128Kx8· Power Supply Voltage: 4.5~5.5V· Low Data Retention Voltage: 2V(Min)· Three state output and TTL Compatible· Package Type: 32-DIP-600, 32-SO...

K6T1008C2E Data Sheet

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Part Number:
K6T1008C2E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Process Technology: TFT
· Organization: 128Kx8
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2V(Min)
· Three state output and TTL Compatible
· Package Type: 32-DIP-600, 32-SOP-525,
    32-TSOP1-0820F/R


Specifications

Item Symbol Ratings Unit Remark

Voltage on any pin relative to Vss		 VIN,VOUT -0.5 to 7.0 V  
Voltage on Vcc supply relative to Vss VCC -0.5 to 7.0 V  
Power Dissipation PD 1.0 W  
Storage temperature TSTG -65 to 150 °C K6T1008C2E-L/-B
Operating Temperature TA 0 to 70 °C K6T1008C2E-P/-F
-40 to 85 °C



Description

The K6T1008C2E families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support
various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.


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