Features: • Fast Access Time 10,12,15ns(Max.)• Low Power DissipationStandby (TTL) : 50mA(Max.)(CMOS) : 10mA(Max.)1.2mA(Max.)- L-Ver.Operating K6R4008V1B-10 : 205mA(Max.)K6R4008V1B-12 : 200mA(Max.)K6R4008V1B-15 : 195mA(Max.)• Single 3.3 ±0.3V Power Supply• TTL Compatible Inp...
K6R4008V1B-P: Features: • Fast Access Time 10,12,15ns(Max.)• Low Power DissipationStandby (TTL) : 50mA(Max.)(CMOS) : 10mA(Max.)1.2mA(Max.)- L-Ver.Operating K6R4008V1B-10 : 205mA(Max.)K6R4008V1B-12 : 2...
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Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) ...
Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) ...
Features: • Fast Access Time 10,12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) ...
Parameter |
Symbol |
Rating |
Unit | |
Voltage on Any Pin Relative to VSS |
VIN, VOUT |
-0.5 to 4.6 |
V | |
Voltage on VCC Supply Relative to VSS |
VCC |
-0.5 to 4.6 |
V | |
Power Dissipation |
PD |
1.0 |
W | |
Storage Temperature |
TSTG |
-65 to 150 |
°C | |
Operating Temperature | Commercial |
TA |
0 to 70 |
°C |
ndustrial |
TA |
-40 to 85 |
°C |
The K6R4008V1B-P is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008V1B-P uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The K6R4008V1B-P is fabricated using SAMSUNG ¢s advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4008V1B-P is packaged in a 400 mil 36-pin plastic SOJ or TSOP(II) forward or 44-pin plastic TSOP(II) forward.