K6R4004V1D

Features:

• Fast Access Time 8,10ns(Max.)
• Low Power Dissipation
  Standby (TTL) :20mA(Max.)
            (CMOS) : 5mA(Max.)
  Operating K6R4004V1D-08: 80mA(Max.)
                   K6R4004V1D-10: 65mA(Max.)
• Single 3.3±0.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
  - No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
  K6R4004V1D-J: 32-SOJ-400
  K6R4004V1D-K: 32-SOJ-400(Lead-Free)
• Operating in Commercial and Industrial Temperature range.


Pinout




Specifications

Parameter		Symbol	Rating	Unit
Voltage on Any Pin Relative to VSS		VIN, VOUT	-0.5 to 4.6	V
Voltage on VCC Supply Relative to VSS		VCC	-0.5 to 4.6	V
Power Dissipation		PD	1.0	W
Storage Temperature		TSTG	-65 to 150	°C
Operating Temperature	Commercial	TA	0 to 70	°C
	Industrial	TA	-40 to 85	°C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The K6R4004V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The K6R4004V1D is fabricated using SAMSUNGs advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4004V1D is packaged in a 400 mil 32-pin plastic SOJ.