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K6R3024V1D

Features: • Fast Access Time 9,10,12ns• Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 15mA(Max.)Operating K6R3024V1D-09 : 170mA(Max.) K6R3024V1D-10 : 150mA(Max.)K6R3024V1D-12 : 130mA(Max.)Single 3.3V Power Supply• TTL Compatible Inputs and Outputs• Fully Static Oper...

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SeekIC No. : 004383187 Detail

K6R3024V1D: Features: • Fast Access Time 9,10,12ns• Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 15mA(Max.)Operating K6R3024V1D-09 : 170mA(Max.) K6R3024V1D-10 : 150mA(Max.)K6R3024V1D-12 : 1...

K6R3024V1D Data Sheet

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Part Number:
K6R3024V1D
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Fast Access Time 9,10,12ns
• Power Dissipation
   Standby (TTL) :     40mA(Max.)
                 (CMOS) : 15mA(Max.)
Operating K6R3024V1D-09 : 170mA(Max.)
                 K6R3024V1D-10 : 150mA(Max.)
                 K6R3024V1D-12 : 130mA(Max.)
Single 3.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
   - No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• 119(7x17)Pin Ball Grid Array Package(14mmx22mm)
• Operating in Commercial and Industrial Temperature range.


Specifications

Parameter Symbol Rating Unit
Voltage on Any Pin Relative to VSS VIN, VOUT -0.5 to 4.6 V
Voltage on VCC Supply Relative to VSS VCC -0.5 to 4.6 V
Power Dissipation Pd 2 W
Storage Temperature TSTG -65 to 150 °C
Operating Temperature Commercial TA 0 to 70 °C
Industrial TA -40 to 85 °C

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The K6R3024V1D is a 3,145,728-bit high-speed Static Random Access Memory organized as 131,072 words by 24 bits. The K6R3024V1D uses 24 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The K6R3024V1D is fabricated using SAMSUNG's advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R3024V1D is a three megabit static RAM constructed on an multilayer laminate substrate using three 3.3V, 128K x 8 static RAMS encapsulated in a Ball Grid Array(BGA).




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