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K6F3216U6M

Features: · Process Technology: Full CMOS· Organization: 2M x16· Power Supply Voltage: 2.7~3.3V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 55-TBGA-7.50x12.00Specifications Item Symbol Ratings Unit Voltage on any pin relative to Vss VIN,VOUT -0.2 to VCC+...

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SeekIC No. : 004383142 Detail

K6F3216U6M: Features: · Process Technology: Full CMOS· Organization: 2M x16· Power Supply Voltage: 2.7~3.3V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 55-TBGA-7.50x12.00Specifica...

K6F3216U6M Data Sheet

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Part Number:
K6F3216U6M
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Process Technology: Full CMOS
· Organization: 2M x16
· Power Supply Voltage: 2.7~3.3V
· Low Data Retention Voltage: 1.5V(Min)
· Three State Outputs
· Package Type: 55-TBGA-7.50x12.00


Specifications

Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN,VOUT -0.2 to VCC+0.3V(Max. 3.6V) V
Voltage on Vcc supply relative to Vss VCC -0.2 to 3.6 V
Power Dissipation PD 1.0 W
Storage temperature TSTG -65 to 150 °C
Operating Temperature TA -40 to 85 °C

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended period may affect reliability.




Description

The K6F3216U6M families are fabricated by SAMSUNG's advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.




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