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K4M511633E-Y(P)C/L/F

Features: • 3.0V or 3.3V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs.-. CAS latency (1, 2 & 3).-. Burst length (1, 2, 4, 8 & Full page).-. Burst type (Sequential & Interleave).• EMR...

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SeekIC No. : 004382823 Detail

K4M511633E-Y(P)C/L/F: Features: • 3.0V or 3.3V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs.-. CAS latency (1, 2 & 3)....

K4M511633E-Y(P)C/L/F Data Sheet

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Part Number:
K4M511633E-Y(P)C/L/F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 3.0V or 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• 1 /CS Support.
• 2chips DDP 54Balls FBGA with 0.8mm ball pitch ( -YXXX : Leaded, -PXXX : Lead Free).


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 V
Voltage on VDD supply relative to Vss VDD ,VDDQ -1.0 ~ 4.6 V
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD 1.0 W
Short circuit current IOS 50 mA

Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.




Description

The K4M511633E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.




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