K4J52324QC-B

Features: • 2.0V + 0.1V power supply for device operation for -BJ**• 2.0V + 0.1V power supply for I/O interface for -BJ**• 1.8V + 0.1V power supply for device operation for -BC**• 1.8V + 0.1V power supply for I/O interface for -BC**• On-Die Termination (ODT)• Ou...

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K4J52324QC-B Picture
SeekIC No. : 004382819 Detail

K4J52324QC-B: Features: • 2.0V + 0.1V power supply for device operation for -BJ**• 2.0V + 0.1V power supply for I/O interface for -BJ**• 1.8V + 0.1V power supply for device operation for -BC**&#...

floor Price/Ceiling Price

Part Number:
K4J52324QC-B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/6

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Product Details

Description



Features:

• 2.0V + 0.1V power supply for device operation for -BJ**
• 2.0V + 0.1V power supply for I/O interface for -BJ**
• 1.8V + 0.1V power supply for device operation for -BC**
• 1.8V + 0.1V power supply for I/O interface for -BC**
• On-Die Termination (ODT)
• Output Driver Strength adjustment by EMRS
• Calibrated output drive
• 1.8V Pseudo Open drain compatible inputs/outputs
• 4 internal banks for concurrent operation
• Differential clock inputs (CK and CK)
• Commands entered on each positive CK edge
• CAS latency : 4, 5, 6, 7, 8, 9, 10, 11 (clock)
• Additive latency (AL): 0 and 1 (clock)
• Programmable Burst length : 4 and 8
• Programmable Write latency : 1, 2, 3, 4, 5, 6 and 7 (clock)
• Single ended READ strobe (RDQS) per byte
• Single ended WRITE strobe (WDQS) per byte
• RDQS edge-aligned with data for READs
• WDQS center-aligned with data for WRITEs
• Data Mask(DM) for masking WRITE data
• Auto & Self refresh modes
• Auto Precharge option
• 32ms, auto refresh (8K cycle)
• 136 Ball FBGA
• Maximum clock frequency up to 800MHz
• Maximum data rate up to 1.6Gbps/pin
• DLL for outputs
• Boundary scan function with SEN pin
• Mirror function with MF pin



Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -0.5 ~ VDDQ + 0.5V V
Voltage on VDD supply relative to Vss VDD -0.5 ~ 2.5 V
Voltage on VDDQ supply relative to Vss VDDQ -0.5 ~ 2.5 V
MAX Junction Temperature TJ +125 °C
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD TBD W
Short circuit current IOS 50 mA

Note :Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure periods may affect reliability.




Description

The K4J52324QC is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 6.4GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, and programmable latencies allow the device to be useful for a variety of high performance memory system applications.




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