K4H561638H-UCCC

The K4H561638H-UCCC is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,777,216 / 4x 8,388,608 / 4x 4,194,304 words by 4/8/16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.

The feature of the K4H561638H-UCCC are:(1)VDD : 2.5V ± 0.2V, VDDQ :  2.5V ± 0.2V for DDR266, 333 ; (2)VDD : 2.6V ± 0.1V, VDDQ :  2.6V ± 0.1V for DDR400; (3)Double-data-rate architecture; two data transfers per clock cycle; (4)Bidirectional data strobe [DQS] (x4,x8)  &  [L(U)DQS] (x16) ; (5)Four banks operation; (6)Differential clock inputs(CK and CK); (7)DLL aligns  DQ and DQS transition with CK transition; (8)MRS cycle with address key programs-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)-. Burst length (2, 4, 8)-. Burst type (sequential & interleave); (9)All inputs except data & DM are sampled at the positive going edge of the system clock(CK); (10)Data I/O transactions on both edges of data strobe ; (11)Edge aligned data output, center aligned data input; (12)LDM,UDM for write masking only (x16); (13)DM for write masking only (x4, x8); (14)Auto & Self refresh; (15)7.8us refresh interval(8K/64ms refresh) ; (16)Maximum burst refresh cycle : 8; (17)66pin TSOP II Pb-Free package.

The absolute maximum ratings of the K4H561638H-UCCC can be summarized as:(1)Voltage on any pin relative to VSS VIN, VOUT:-0.5 ~ 3.6 V; (2)Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ :-1.0 ~ 3.6 V; (3)Storage temperature TSTG :-55 ~ +150 °C; (4)Power dissipation PD: 1.5 W; (5)Short circuit current IOS :50 mA .   

If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .