K4H511638D-UC3

The  K4H511638D is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 8,388,608 words by 16bits,fabricated with SAMSUNGs high performance CMOS technology.The K4H511638D-UC3 belongs to K4H511638D series.

Key features of the K4H511638D-UC3 are:(1)VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333;(2)VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400;(3)double-data-rate architecture; two data transfers per clock cycle;(4)bidirectional data strobe [DQS] (x4,x8) and [L(U)DQS] (x16);(5)four banks operation;(6)differential clock inputs(CK and CK);(7)DLL aligns DQ and DQS transition with CK transition;(8)MRS cycle with address key programs;(9)all inputs except data and DM are sampled at the positive going edge of the system clock(CK);(10)data I/O transactions on both edges of data strobe;(11):edge aligned data output, center aligned data input;(12):LDM,UDM for write masking only (x16);(13):DM for write masking only (x4, x8);(14):auto and self refresh;(15):7.8us refresh interval(8K/64ms refresh);(16):maximum burst refresh cycle is 8;(17):66pin TSOP II Pb-free package;(18)RoHS compliant.

The absolute maximum ratings of the K4H511638D-UC3 can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VIN,VOUT,the value is -0.5 to 3.6,the unit is V;(2):the parameter is voltage on VDD and VDDQ supply relative to VSS,the symbol is VDD, VDDQ,the value is -1.0 to 3.6,the unit is V;(3):the parameter is storage temperature,the symbol is TSTG,the value is -55 to +150,the unit is ;(4):the parameter is power dissipation,the symbol is PD,the value is 1.5,the unit is W;(5):the parameter is short circuit current,the symbol is IOS,the value is 50,the unit is mA.