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K4H280438F-LB0

Features: • Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strobe(DQS)• Four banks operation• Differential clock inputs(CK and CK)• DLL aligns DQ and DQS transition with CK transition• MRS cycle with address key programs-. ...

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SeekIC No. : 004382767 Detail

K4H280438F-LB0: Features: • Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strobe(DQS)• Four banks operation• Differential clock inputs(CK and CK)̶...

K4H280438F-LB0 Data Sheet

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Part Number:
K4H280438F-LB0
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/19

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Product Details

Description



Features:

• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 15.6us refresh interval(4K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II Pb-Free package
• RoHS compliant


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 ~ 3.6
V
Voltage on VDD & VDDQ supply relative to VSS
VDD,VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.5
W
Short circuit current
IOS
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.


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