K4G323222A

• 3.3V power supply
• LVTTL compatible with multiplexed address
• Dual bank operation
• MRS cycle with address key programs
-. CAS Latency (2, 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst Read Single-bit Write operation
• DQM 0-3 for byte masking
• Auto & self refresh
• 32ms refresh period (2K cycle)
• 100 Pin PQFP, TQFP (14 x 20 mm)

Note :Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.Functional operation should be restricted to recommended operating condition.Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

The K4G323222A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits,fabricated with SAMSUNG¢s high performance CMOS technology.Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length, and programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.8 columns block write improves performance in graphics systems.