K4F170411D

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs K4F170411D . Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.This 4Mx4 Fast Page Mode DRAM K4F170411D  family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability. The K4F170411D  may be used as main memory for high level computer, microcomputer and personal computer.