K4E160811D-BC60

The K4E160811D-BC60 is designed as one kind of 2,097,152 x 8 bit Extended Data Out CMOS DRAM device that offers high speed random access of memory cells within the same row. And this device is fabricated using Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability.

Features of the K4E160811D-BC60 are:(1)Fast Page Mode operation; (2)2 CAS Byte/Wrod Read/Write operation; (3)CAS-before-RAS refresh capability; (4)RAS-only and Hidden refresh capability; (5)Self-refresh capability (L-ver only); (6)TTL(5V)/LVTTL(3.3V) compatible inputs and outputs; (7)Early Write or output enable controlled write; (8)JEDEC Standard pinout; (9)Available in 40-pin SOJ 400mil and44(40)-pin TSOP(II) 400mil packages; (10)Triple +5V +/- 10% power supply(5V product); (11)Triple +3.3V +/- 0.3V power supply(3.3V product).

The absolute maximum ratings of the K4E160811D-BC60 can be summarized as:(1)Voltage on any pin relative to VSS: -0.5 to +4.6 or -1.0 to +7.0 V;(2)Voltage on VCC supply relative to VSS: -0.5 to +4.6 or -1.0 to +7.0 V;(3)Storage Temperature: -55 to +150 ;(4)Power Dissipation: 1 W;(5)Short Circuit Output Current: 50 mA. If you want to know more information such as the electrical characteristics about the K4E160811D-BC60, please download the datasheet in www.seekic.com or www.chinaicmart.com.