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K4D623238B

Features: • 2.5V + 5% power supply for device operation• 2.5V + 5% power supply for I/O interface• SSTL_2 compatible inputs/outputs• 4 banks operation• MRS cycle with address key programs-. Read latency 3,4 (clock)-. Burst length (2, 4, 8 and Full page)-. Burst type (...

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SeekIC No. : 004382696 Detail

K4D623238B: Features: • 2.5V + 5% power supply for device operation• 2.5V + 5% power supply for I/O interface• SSTL_2 compatible inputs/outputs• 4 banks operation• MRS cycle with a...

K4D623238B Data Sheet

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Part Number:
K4D623238B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 2.5V + 5% power supply for device operation
• 2.5V + 5% power supply for I/O interface
• SSTL_2 compatible inputs/outputs
• 4 banks operation
• MRS cycle with address key programs
-. Read latency 3,4 (clock)
-. Burst length (2, 4, 8 and Full page)
-. Burst type (sequential & interleave)
• Full page burst length for sequential burst type only
• Start address of the full page burst should be even
• All inputs except data & DM are sampled at the positive going edge of the system clock
• Differential clock input
• No Write Interrupted by Read Function
• Data I/O transactions on both edges of Data strobe
• DLL aligns DQ and DQS transitions with Clock transition
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• DM for write masking only
• Auto & Self refresh
• 16ms refresh period (2K cycle)
• 100-Pin TQFP package
• Maximum clock frequency up to 222MHz
• Maximum data rate up to 444Mbps/pin


Pinout

Connection Diagram


Specifications

Parameter
SYMBOL
Commercial
UNIT
Voltage on VDD supply relative to Vss
VDD
-0.5 ~ 3.6
V
Voltage on any pin relative to Vss
Vin, Vout
-1.0 ~ 3.6
V
Voltage on VDD supply relative to Vss
VDDQ
-0.5 ~ 3.6
V
Power Dissipation
PD
2.0
W
Short circuit current
IOS
50
mA
Storage Temperature
Tstg
-55 ~ +150
°C
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.


Description

The K4D623238 is 67,108,864 bits of hyper synchronous data rate Dynamic RAM organized as 2 x1,048,976 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow
extremely high performance up to 1.8GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.




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