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K3S7V2000M-TC

Features: · JEDEC standard 3.3V power supply· LVTTL compatible with multiplexed address· Address: Row address: RA0 ~ RA12Column address: CA0 ~ CA7 (x32): CA0 ~ CA8 (x16)· Switchable organization4,194,304 x 16(word mode) /2,097,152 x 32(double word mode)· All inputs are sampled at the rising edge o...

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SeekIC No. : 004382669 Detail

K3S7V2000M-TC: Features: · JEDEC standard 3.3V power supply· LVTTL compatible with multiplexed address· Address: Row address: RA0 ~ RA12Column address: CA0 ~ CA7 (x32): CA0 ~ CA8 (x16)· Switchable organization4,19...

K3S7V2000M-TC Data Sheet

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Part Number:
K3S7V2000M-TC
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· JEDEC standard 3.3V power supply
· LVTTL compatible with multiplexed address
· Address: Row address: RA0 ~ RA12
Column address: CA0 ~ CA7 (x32): CA0 ~ CA8 (x16)
· Switchable organization
4,194,304 x 16(word mode) /
2,097,152 x 32(double word mode)
· All inputs are sampled at the rising edge of the system clock
· Read Performance at memory point of view
@33MHz 4-1-1-1 (RAS Latency=1, CAS Latency=3)
@50MHz 5-1-1-1 (RAS Latency=1, CAS Latency=4)
@66MHz 5-1-1-1 (RAS Latency=1, CAS Latency=4)
@83MHz 7-1-1-1 (RAS Latency=2, CAS Latency=5)
@100MHz 7-1-1-1 (RAS Latency=2, CAS Latency=5)
· tSAC : 6ns
· Default mode by user requirement
· MRS cycle with address key programs
-. RAS Latency(1 & 2)
-. CAS Latency(3 ~ 6)
-. Burst Length : 4, 8
-. Burst Type : Sequential & Interleaved
· DQM for data-out masking
· Package :86TSOP2 - 400


Pinout

Connection Diagram


Specifications

Parameter Symbol Min Max Unit
Voltage on VDD Relative to Vss VDD, VDDQ -0.5 4.6 V
Voltage on Any Pin Relative to Vss VIN, VOUT -0.5 VDD + 0.5 4.6 V
Operating Temperature TA 0 70
Storage Temperature TSTG -55 125
Short circuit current IOS - 50 mA
Power Dissipation PD - 1 W
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
          Functional operation should be restricted to recommended operating condition.


Description

The K3S7V2000M-TC is a synchronous high bandwidth mask programmable ROM fabricated with SAMSUNG¢s high performance CMOS process technology and is organized either as 4,194,304 x16bit(word mode) or as 2,097,152 x32bit(double word mode) depending on polarity of WORD pin.(see pin function description). Synchronous design allows precise cycle control, with the use of system clock, I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.




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