Features: · Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode)· Fast access time Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.)@CL=50pF, 120/40ns(Max.)@CL=100pF 3.0V Operation : 120/40ns(Max.)@CL=100pF 8 Words / 16 Bytes page access· Supply voltage : si...
K3P7V(U)1000B-YC: Features: · Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode)· Fast access time Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.)@CL=50pF, 120/40ns(Max.)@C...
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Item | Symbol | Rating | Unit |
Voltage on Any Pin Relative to VSS | VIN | -0.3 to +4.5 | V |
Temperature Under Bias | TBIAS | -10 to +85 | |
Storage Temperature | TSTG | -55 to +150 |
NOTE : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
The K3P7V(U)1000B-YC is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 8,388,608 x 8 bit(byte mode) or as 4,194,304 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This K3P7V(U)1000B-YC includes page read mode function, page read mode allows 8 words (or 16 bytes) of data to read fast in the same page, CE and A3 ~ A21 should not be changed.
This K3P7V(U)1000B-YC operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external clock assuring extremely easy operation.
The K3P7V(U)1000B-YC is suitable for use in program memory of microprocessor, and data memory, character generator.
The K3P7V(U)1000B-YC is packaged in a 48-TSOP1.