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K1S64161CC

Features: • Process Technology: CMOS• Organization: 4M x16 bit• Power Supply Voltage: 2.7~3.1V• Three State Outputs• Compatible with Low Power SRAM• Support 4 page read mode• Package Type: 48-FBGA-6.00x8.00Specifications Item Symbol Ratings Unit ...

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SeekIC No. : 004382616 Detail

K1S64161CC: Features: • Process Technology: CMOS• Organization: 4M x16 bit• Power Supply Voltage: 2.7~3.1V• Three State Outputs• Compatible with Low Power SRAM• Support 4 pag...

K1S64161CC Data Sheet

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Part Number:
K1S64161CC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Process Technology: CMOS
• Organization: 4M x16 bit
• Power Supply Voltage: 2.7~3.1V
• Three State Outputs
• Compatible with Low Power SRAM
• Support 4 page read mode
• Package Type: 48-FBGA-6.00x8.00


Specifications

Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN, VOUT -0.2 to VCC+0.3V V
Voltage on Vcc supply relative to Vss VCC -0.2 to 3.6V V
Power Dissipation PD 1.0 W
Storage temperature TSTG -65 to 150 °C
Operating Temperature TA -40 to 85 °C

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reliability.




Description

The K1S64161CC is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device supports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature range.




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