K10N06FM

During Normal Operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path as soon as V_IN > V_IH.

The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user's standpoint is that a small DC current (typically 150 mA) flows into the INPUT pin in order to supply the internal circuitry.

During turn-off of an unclamped inductive load the output voltage is clamped to a safe level by an integrated Zener clamp between DRAIN pin and the gate of the internal Power MOSFET.

In this condition, the Power MOSFET gate is set to a voltage high enough to sustain the inductive load current even if the INPUT pin is driven to 0V. The device integrates an active current limiter circuit which limits the drain current I_D to Ilim whatever the INPUTpin Voltage.

When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the heatsinking capability. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T_jsh.

If T_j reaches T_jsh, the device shuts down whatever the INPUT pin voltage. The device will restart automatically when T_j has cooled down to T_jrs

The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.