SpecificationsMaximum Power Dissipation @ 252 350 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 50 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 15 AmpsMaximum TemperaturesStorage Temperature - 65 to + 200 Operating Junction Temperature + 200DescriptionThe JTDA...
JTDA150A: SpecificationsMaximum Power Dissipation @ 252 350 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 50 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 15 AmpsMaximum T...
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The JTDA-150A is a high power COMMON BASE bipolar transistor. The JTDA-150A is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor JTDA-150A includes input and output prematch for broadband performance. The JTDA-150A has gold thin-film metallization and diffused ballasting for proven highest MTTF. Low thermal resistance Solder Sealed Package reduces junction temperature, extends life.