DescriptionThe JT6N46S is a kind of system LSI for radio frequency identification (RFID) wireless cards. The device incorporates an analog circuit, a data processing circuit and data memory in a single chip. There are some features of JT6N46S as follows: (1)high-noise-resistant PSK modulation: bi...
JT6N46S: DescriptionThe JT6N46S is a kind of system LSI for radio frequency identification (RFID) wireless cards. The device incorporates an analog circuit, a data processing circuit and data memory in a sin...
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The JT6N46S is a kind of system LSI for radio frequency identification (RFID) wireless cards. The device incorporates an analog circuit, a data processing circuit and data memory in a single chip.
There are some features of JT6N46S as follows: (1)high-noise-resistant PSK modulation: binary phase-shift keying (BPSK) for both reader-to-RFID and RFID-to-reader transmission.; (2)start-stop synchronization and half-duplex transmission: with parity, 1 stop bit; (3)high-efficiency power generation circuit using electromagnetic induction: battery less operation, full-wave rectifier circuit, shunt regulator; (4)data processing logic circuit: digital PLL, security circuit; (5)high-reliability E2PROM: 4 Kbits; maximum write time: 7 ms (16-byte batch write); overwrite: 100,000 times; data retention: 10 years; (6)selectable receive carrier frequency: 100 kHz to 500 kHz (when external antenna circuit is used); (7)programmable security circuit: security level can be set; (8)high-speed transfer rate of 25 kbps: 1/16 of receive carrier frequency = 400 kHz; (9)high-speed multi-read of 32 IDs per second: when receive carrier frequency = 400 kHz (ID only read); (10)supplied as chips or on wafer: chip thickness: 175 m (typ.).
The following is about the maximum ratings of JT6N46S: (1)input current (between ANT1 GND ANT2), IANT: DC 40 mA; (2)operating temperature range, Topr: -20 to +85; (3)storage temperature range, Tstg: -50 to +150. Then is about the DC characteristics: (1)minimum operating voltage 1 (minimum operating voltageexcluding memory write (voltage check pin is VDD.)), VDD (min): 2.0 V typ and 2.2 V max when ; (2)minimum operating voltage 2 (minimum operating voltage including memory write (voltage check pin is VDD.)), VDD (eew): 2.7 V typ and 2.9 V max ; (3)operating current dissipation 1 (current dissipation for operations excluding memory write (VDD=2.2 V)), IDDopr1: 350A typ and 450A max; (4)operating current dissipation 2 (current dissipation for all operations including memory write (VDD=2.9 V)), IDDopr2: 400A typ and 500A max.