DescriptionThe JS28F640J3D75 is designed as one kind of numonyx embedded flash memory device that provides improved mainstream performance with enhanced security features. And this device takes advantage of the proven manufacturing experience and is ideal for code and data applications where high ...
JS28F640J3D75: DescriptionThe JS28F640J3D75 is designed as one kind of numonyx embedded flash memory device that provides improved mainstream performance with enhanced security features. And this device takes adva...
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The JS28F640J3D75 is designed as one kind of numonyx embedded flash memory device that provides improved mainstream performance with enhanced security features. And this device takes advantage of the proven manufacturing experience and is ideal for code and data applications where high density and low cost are required, such as in networking, telecommunications, digital set top boxes, audio recording, and digital imaging.
Features of the JS28F640J3D75 are:(1)100K Minimum erase cycles per block;(2)0.13 m ETOX VIII Process;(3)Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible;(4)Program and erase suspend support;(5)Block erase/program lockout during power transitions;(6)Individual block locking;(7)Absolute protection with VPEN = GND;(8)64-bit User-programmable OTP cells;(9)128-bit Protection Register;(10)Enhanced security options for code protection.
The absolute maximum ratings of the JS28F640J3D75 can be summarized as:(1)Temperature under Bias Expanded (TA, Ambient):40 to +85 °C;(2)Storage Temperature: -65 to +125 °C;(3)VCC Voltage: -2.0 to +5.6 V;(4)VCCQ:2.0 to +5.6 V;(5)Voltage on any input/output signal (except VCC, VCCQ): -2.0 to VCCQ(max)+2.0 V;(6)ISH Output Short Circuit Current: 100 mA. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .