Features: • High Capacitance Ratio : C1V/C4V = 3.0 (typ.)• Low Series Resistance : rs = 0.35 (typ.)• The device incorporates two diodes which have no common pins, and is suitable for high-density mounting.Specifications Characteristics Symbol Rating Unit Reverse volt...
JDV4P08U: Features: • High Capacitance Ratio : C1V/C4V = 3.0 (typ.)• Low Series Resistance : rs = 0.35 (typ.)• The device incorporates two diodes which have no common pins, and is suitable...
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• High Capacitance Ratio : C1V/C4V = 3.0 (typ.)
• Low Series Resistance : rs = 0.35 (typ.)
• The device incorporates two diodes which have no common pins, and is
suitable for high-density mounting.
Characteristics | Symbol | Rating | Unit |
Reverse voltage | VR | 10 | V |
Junction temperature | Tj | 125 | |
Storage temperature range | Tstg | −55~125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).