Features: · Hermetically Sealed· Simple Drive Requirements· Ease of Paralleling· Small footprint· Surface Mount· LightweightSpecifications Parameter Max. Units EAS Single Pulse Avalanche Energy ➁ 0.31 mJ VGS Gate-to-Source Voltage ± 20 V ID @ TC = 25°C Continuous D...
JANTXV2N6802U: Features: · Hermetically Sealed· Simple Drive Requirements· Ease of Paralleling· Small footprint· Surface Mount· LightweightSpecifications Parameter Max. Units EAS Single Pulse Avalanc...
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Parameter | Max. | Units | |
EAS | Single Pulse Avalanche Energy ➁ | 0.31 | mJ |
VGS | Gate-to-Source Voltage | ± 20 | V |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 2.5 | A |
ID @ TA = 70°C | Continuous Drain Current, VGS @ 10V | 1.5 | A |
IDM | Pulsed Drain Current | 11 | A |
PD @TC = 25°C | Power Power Dissipation | 25 | W |
Linear Derating Factor | 0.20 | W/K | |
dv/dt | Peak Diode Recovery dv/dt | 6.2 | V/nS |
TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
Surface Temperature | 300 ( for 5 seconds) | °C | |
Weight | 0.42 (typical) | g |