JANTXV2N6788A

The  JANTXV2N6788A is hexfet power mosfet.HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors.  The efficient geometry achieves very low on-state resistance combined with high transconductance.HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtually any application where high reliability is required.

Features of the JANTXV2N6788A are:(1)Avalanche Energy Rating; (2)Dynamic dv/dt Rating; (3)Simple Drive Requirements; (4)Ease of Paralleling; (5)Hermetically Sealed.

The absolute maximum ratings of the JANTXV2N6788A can be summarized as:(1) Continuous Drain Current: 6.0A; (2) Continuous Drain Current :3.5A; (3)Pulsed Drain Current :24A; (4) Max. Power Dissipation: 20 W; (5)Linear Derating Factor :0.16 W/K ; (6)Gate-to-Source Voltage :±20 V; (7) Peak Diode Recovery dv/dt : 5.5 V/ns; (8)Operating Junction Storage T emperature Range: -55 to 150; (9)Lead Temperature :300 (0.063 in. (1.6mm) from case for 10.5 seconds); (10)Weight 0.98 (typical) g.If you want to know more information such as the electrical characteristics, please download the datasheet in www.seekic.com or www.chinaicmart.com.