Features: · Avalanche Energy Rating· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically SealedSpecifications Parameter JANTX2N6788, JANTXV2N6788 Units ID @ VGS = 10V, TC = 25 Continuous Drain Current 6.0 A ID @ VGS = 10V, TC = 100...
JANTXV2N6788: Features: · Avalanche Energy Rating· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically SealedSpecifications Parameter JANTX2N6788, JANTXV2N6788 Unit...
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Parameter |
JANTX2N6788, JANTXV2N6788 |
Units | |
ID @ VGS = 10V, TC = 25 |
Continuous Drain Current |
6.0 |
A |
ID @ VGS = 10V, TC = 100 |
Continuous Drain Current |
3.5 |
|
IDM |
Pulsed Drain Current |
24 |
|
PD @ TC = 25 |
Max. Power Dissipation |
20 |
W |
Linear Derating Factor |
0.16 |
W/K | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
dv/dt |
Peak Diode Recovery dv/dt |
5.5 |
V/ns |
TJ |
Operating Junction |
-55 to 150 |
g |
TSTG |
Storage Temperature Range |
||
Lead Temperature |
300 (0.063 in. (1.6mm) fromcase for 10.5 seconds) | ||
Weight |
0.98 (typical) |
HEXFET technology JANTXV2N6788 is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors JANTXV2N6788 also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. The JANTXV2N6788 is well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtually any application where high reliability is required.