DescriptionThe JANTXV2N5683 is designed as one kind of NPN high power silicon transistor. The absolute maximum ratings of the JANTXV2N5683 can be summarized as:(1)Collector-Emitter Voltage: 60 Vdc;(2)Collector-Base Voltage: 60 Vdc;(3)Emitter-Base Voltage: 5.0 Vdc;(4)Collector Current: 15 Adc;(5)To...
JANTXV2N5683: DescriptionThe JANTXV2N5683 is designed as one kind of NPN high power silicon transistor. The absolute maximum ratings of the JANTXV2N5683 can be summarized as:(1)Collector-Emitter Voltage: 60 Vdc;(...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The JANTXV2N5683 is designed as one kind of NPN high power silicon transistor. The absolute maximum ratings of the JANTXV2N5683 can be summarized as:(1)Collector-Emitter Voltage: 60 Vdc;(2)Collector-Base Voltage: 60 Vdc;(3)Emitter-Base Voltage: 5.0 Vdc;(4)Collector Current: 15 Adc;(5)Total Power Dissipation @ TA = 25: 300 W;(6)Total Power Dissipation @ TA = 100: 171 W;(7)Operating & Storage Junction Temperature Range: -65 to +200 .
And the electrical characteristics (Tc=25 unless otherwise noted) of the JANTXV2N5683 can be summarized as:(1)Collector-Emitter Breakdown Current: 60 Vdc;(2)Collector-Emitter Cutoff Current: 5.0 uAdc;(3)Collector-Base Cutoff Current: 5.0 uAdc;(4)Emitter-Base Cutoff Current: 5.0 uAdc;(5)Turn-Off Time: 3.0 us;(6)Turn-On Time: 1.5 us. If you want to know more information such as the electrical characteristics about the JANTXV2N5683, please download the datasheet in www.seekic.com or www.chinaicmart.com.