JANTX2N7335

The JANTX2N7335 is a kind of  power MOSFET. The JANTX2N7335 adopts HEXFET® MOSFET technology, which is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. In addition, the HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink, which improves thermal efficiency and reduces drain capacitance.

There are some features of JANTX2N7335 as follows: (1)Simple Drive Requirements; (2)Ease of Paralleling; (3)Hermetically Sealed; (4)Electrically Isolated; (5)Dynamic dv/dt Rating; (6)Light-weight.

Then is about the absolute maximum ratings of JANTX2N7335: (1)ID @ VGS = -10V, TC = 25, Continuous Drain Current: -0.75 A; (2)ID @ VGS = -10V, TC = 100, Continuous Drain Current: -0.5 A; (3)IDM, Pulsed Drain Current: -3.0 A; (4)PD @ TC = 25°C, Max. Power Dissipation: 1.4 W; (5)VGS, Gate-to-Source Voltage: ±20 V; (6)EAS, Single Pulse Avalanche Energy: 75 mJ; (7)dv/dt, Peak Diode Recovery dv/dt: -5.5 V/ns; (8)TJ, TSTG,  Operating Junction and Storage Temperature Range: -55 to 150; (9)Lead Temperature, ( 0.063 in.(1.6mm) from case for 10s): 300.